The present invention is related to a memristive system and a method to induce a memristive effect. An object of the present invention is to design a memristive system containing a simple structure to feedback the signal, to find a method of inducing a memristive effect implying a simple feedback step and to be able to significantly change the characteristics of the memristive effect according to the fed in parameters. This object is achieved by a memristive system comprising means for generating a spin polarization mechanism and means for generating a memory effect in the voltage-current phase plane, where these means are arranged in a feedback loop architecture, as well as by a method of inducing a memristive effect where a feedback loop is established by a combining a spin polarization process with the action of the classical Hall effect.