Neodymium sulphide (Nd ₂ S ₃ ) belongs to the exciting class of rare earth sulphides (RES) and is projected to have a serious potential in a wide spectrum of application either in pure form or as dopant. We demonstrate a facile and first growth of Nd ₂ S ₃ thin films via metal-organic chemical vapour deposition (MOCVD) at moderate process conditions using two new Nd precursors, namely tris(N,N′-diisopropyl-2-dimethylamido-guanidinato)Nd(iii) and tris(N,N′-diisopropyl-acetamidinato)Nd(iii). The promising thermal properties and suitable reactivity of both Nd precursors towards elemental sulphur enabled the formation of high purity γ-Nd ₂ S ₃ . While the process temperature for film growth ranged from 400 °C to 600 °C, the films were crystalline above 500 °C. We also demonstrate that the as-deposited γ-Nd ₂ S ₃ are luminescent, with the optical bandgap ranging from 2.3 eV to 2.5 eV. The process circumvents post-deposition treatments such as sulfurisation to fabricate the desired Nd ₂ S ₃ , which paves the way for large scale synthesis and also opens up new avenues for exploring the potential of this class of materials with properties for functional applications.