Plasma cleaning of extreme ultra-violet (EUV) optics for the semiconductor industry requires atomic-level precision. Low-energy ions and neutrals can be highly beneficial for this purpose. However, ion energies in many industrial capacitively or inductively coupled plasmas may be too high for atomic precision processing so that ions can cause sputtering and re-deposition of materials and produce vacuum system contamination. We discuss two sources that create low-energy ions: a capacitively coupled (CCP) plasma source operating at several tens of MHz and an electron beam gas ionization source. The goal here is to minimize the contamination by limiting the ion impact energy to a few tens of electron-volts. Ion energy and flux measurements on a grounded surface are characterized with a compact retarding field ion spectrometer. Plasma-induced contamination is quantified using X-ray photo-electron spectroscopy (XPS). Low ion energy plasma sources introducing little surface contamination may be interesting for cleaning and accelerated testing in EUV lithography (EUVL)-related research and for cleaning of front-end optical mirrors in fusion reactor diagnostics.