Intra-excitonic relaxation dynamics in ZnO
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Contributors
Abstract
The temperature and carrier-density dependent excitonic relaxation in bulk ZnO is studied by means of time-resolved photoluminescence. A rate-equation model is used to analyze the population dynamics and the transitions between different exciton states. Intra-excitonic (n 1) to (n 2) relaxation is clearly identified at low excitation densities and lattice temperatures with a characteristic time constant of 6 ± 0.5 ps.
Details
Original language | English |
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Article number | 231910 |
Journal | Applied physics letters |
Volume | 99 |
Issue number | 23 |
Publication status | Published - 5 Dec 2011 |
Peer-reviewed | Yes |
Externally published | Yes |