Interlayer exciton dynamics in a dichalcogenide monolayer heterostructure

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Philipp Nagler - , University of Regensburg (Author)
  • Gerd Plechinger - , University of Regensburg (Author)
  • Mariana V. Ballottin - , Radboud University Nijmegen (Author)
  • Anatolie Mitioglu - , Radboud University Nijmegen (Author)
  • Sebastian Meier - , University of Regensburg (Author)
  • Nicola Paradiso - , University of Regensburg (Author)
  • Christoph Strunk - , University of Regensburg (Author)
  • Alexey Chernikov - , University of Regensburg (Author)
  • Peter C.M. Christianen - , Radboud University Nijmegen (Author)
  • Christian Schüller - , University of Regensburg (Author)
  • Tobias Korn - , University of Regensburg (Author)

Abstract

In heterostructures consisting of different transition-metal dichalcogenide monolayers, a staggered band alignment can occur, leading to rapid charge separation of optically generated electron-hole pairs into opposite monolayers. These spatially separated electron-hole pairs are Coulomb-coupled and form interlayer excitons. Here, we study these interlayer excitons in a heterostructure consisting of MoSe2 and WSe2 monolayers using photoluminescence spectroscopy. We observe a non-trivial temperature dependence of the linewidth and the peak energy of the interlayer exciton, including an unusually strong initial redshift of the transition with temperature, as well as a pronounced blueshift of the emission energy with increasing excitation power. By combining these observations with time-resolved photoluminescence measurements, we are able to explain the observed behavior as a combination of interlayer exciton diffusion and dipolar, repulsive exciton-exciton interaction.

Details

Original languageEnglish
Article number025112
Journal2D materials
Volume4
Issue number2
Publication statusPublished - Jun 2017
Peer-reviewedYes
Externally publishedYes

Keywords

Keywords

  • Heterostructures, Interlayer excitons, Transition-metal dichalcogenides