Integrated complementary inverters and ring oscillators based on vertical-channel dual-base organic thin-film transistors

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

Abstract

Lateral-channel dual-gate organic thin-film transistors have been used in pseudo complementary metal–oxide–semiconductor (CMOS) inverters to control switching voltage. However, their relatively long channel lengths, combined with the low charge carrier mobility of organic semiconductors, typically leads to slow inverter operation. Vertical-channel dual-gate organic thin-film transistors are a promising alternative because of their short channel lengths, but the lack of appropriate p- and n-type devices has limited the development of complementary inverter circuits. Here, we show that organic vertical n-channel permeable single- and dual-base transistors, and vertical p-channel permeable base transistors can be used to create integrated complementary inverters and ring oscillators. The vertical dual-base transistors enable switching voltage shift and gain enhancement. The inverters exhibit small switching time constants at 10 MHz, and the seven-stage complementary ring oscillators exhibit short signal propagation delays of 11 ns per stage at a supply voltage of 4 V.

Details

Original languageEnglish
Pages (from-to)588-594
Number of pages7
JournalNature electronics
Volume4
Issue number8
Publication statusPublished - Aug 2021
Peer-reviewedYes

External IDs

Scopus 85110157059
ORCID /0000-0002-9773-6676/work/142247014

Keywords