Indium-tris-guanidinates: A promising class of precursors for water assisted atomic layer deposition of In2O3 thin films
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Contributors
Abstract
Two closely related mononuclear homoleptic indium-tris-guanidinate complexes have been synthesized and characterized as precursors for atomic layer deposition (ALD) of In2O3. In a water assisted ALD process, high quality In2O3 thin films have been fabricated for the first time using the new class of precursors as revealed by the promising ALD growth characteristics and film properties.
Details
| Original language | English |
|---|---|
| Pages (from-to) | 937-940 |
| Number of pages | 4 |
| Journal | Dalton transactions |
| Volume | 43 |
| Issue number | 3 |
| Publication status | Published - 21 Jan 2014 |
| Peer-reviewed | Yes |
| Externally published | Yes |