InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires

Research output: Contribution to journalResearch articleContributedpeer-review


  • David Scarpellini - , University of Rome Tor Vergata (Author)
  • Claudio Somaschini - , University of Milan - Bicocca (Author)
  • Alexey Fedorov - , Polytechnic University of Milan (Author)
  • Sergio Bietti - , University of Milan - Bicocca (Author)
  • Cesare Frigeri - , National Research Council of Italy (Author)
  • Vincenzo Grillo - , Ctr CNR S3 NANO (Author)
  • Luca Esposito - , Polytechnic University of Milan (Author)
  • Marco Salvalaglio - , University of Milan - Bicocca (Author)
  • Anna Marzegalli - , University of Milan - Bicocca (Author)
  • Francesco Montalenti - , University of Milan - Bicocca (Author)
  • Emiliano Bonera - , University of Milan - Bicocca (Author)
  • Pier Gianni Medaglia - , University of Rome Tor Vergata (Author)
  • Stefano Sanguinetti - , University of Milan - Bicocca (Author)


We present the fabrication of axial InAs/GaAs nanowire heterostructures on silicon with atomically sharp interfaces by molecular beam epitaxy. Our method exploits the crystallization at low temperature, by As supply, of In droplets deposited on the top of GaAs NWs grown by the self-assisted (self-catalyzed) mode. Extensive characterization based on transmission electron microscopy sets an upper limit for the InAs/GaAs interface thickness within few bilayers (


Original languageEnglish
Pages (from-to)3677-3683
Number of pages7
JournalNano letters
Issue number6
Publication statusPublished - Jun 2015
Externally publishedYes

External IDs

Scopus 84935843343



  • Semiconductor nanowires, self-assisted growth, InAs, GaAs, heterostructure, molecular beam epitaxy, GAAS NANOWIRES, INP NANOWIRES, GROWTH, SILICON, FIELD, DISPLACEMENT, ELECTRONICS, EPITAXY, STEM