The discovery of ferroelectricity in hafnium oxide has gained significant attention due to its detrimental role in modern microelectronics [1]. If doped with zirconium, Hf_x Zr_1-x O₂ (HZO), it crystallizes into an orthorhombic ferroelectric phase at sufficiently lower temperatures [3] , which is important to meet the requirements on maximum anneal temperature for conventional Back-End-of-Line (BEoL) processes. This makes HZO an ideal candidate for use as a thin-film varactor with applications in RF and mmWave networks [4 , 5 , 6 , 7].