Highly transparent aluminum silicon oxy nitride permeation barriers for optoelectronic devices

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

  • Patrick Schlenz - , Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology (Author)
  • Cindy Steiner - , Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology (Author)
  • Olaf Zywitzki - , Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology (Author)
  • Elizabeth von Hauff - , Chair of Coating Technologies in Electronics (with Fraunhofer), Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology (Author)

Abstract

We investigate the properties of sputtered aluminum silicon oxynitride layers for application as transparent permeation barrier front sheets for flexible opto-electronic applications. We compare the results from mixed aluminum-silicon and pure silicon targets when the reactive gas content is varied in a dynamic roll-to-roll process on the optical, structural, permeation properties of the layers. We observe that permeation barrier layers deposited from mixed aluminum-silicon targets shows a change in layer growth and the resulting properties compared with layers from a pure silicon Target.

Details

Original languageEnglish
Article number132411
JournalSurface and Coatings Technology
Volume512
Publication statusPublished - 15 Sept 2025
Peer-reviewedYes

External IDs

ORCID /0000-0002-6269-0540/work/223382270

Keywords

Keywords

  • Flexible electronics, Magnetron sputtering, Permeation barrier