Highly Sensitive Electromechanical Piezoresistive Pressure Sensors Based on Large-Area Layered PtSe2 Films

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Stefan Wagner - , RWTH Aachen University (Author)
  • Chanyoung Yim - , Bundeswehr University of Munich (Author)
  • Niall McEvoy - , Trinity College Dublin (Author)
  • Satender Kataria - , RWTH Aachen University (Author)
  • Volkan Yokaribas - , University of Siegen (Author)
  • Agnieszka Kuc - , Leipzig University, Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • Stephan Pindl - , Infineon Technologies AG (Author)
  • Claus Peter Fritzen - , University of Siegen (Author)
  • Thomas Heine - , Chair of Theoretical Chemistry, Leipzig University, Helmholtz-Zentrum Dresden-Rossendorf (Author)
  • Georg S. Duesberg - , Bundeswehr University of Munich, Trinity College Dublin (Author)
  • Max C. Lemme - , RWTH Aachen University, AMO GmbH (Author)

Abstract

Two-dimensional (2D) layered materials are ideal for micro- and nanoelectromechanical systems (MEMS/NEMS) due to their ultimate thinness. Platinum diselenide (PtSe2), an exciting and unexplored 2D transition metal dichalcogenide material, is particularly interesting because its low temperature growth process is scalable and compatible with silicon technology. Here, we report the potential of thin PtSe2 films as electromechanical piezoresistive sensors. All experiments have been conducted with semimetallic PtSe2 films grown by thermally assisted conversion of platinum at a complementary metal-oxide-semiconductor (CMOS)-compatible temperature of 400 °C. We report high negative gauge factors of up to -85 obtained experimentally from PtSe2 strain gauges in a bending cantilever beam setup. Integrated NEMS piezoresistive pressure sensors with freestanding PMMA/PtSe2 membranes confirm the negative gauge factor and exhibit very high sensitivity, outperforming previously reported values by orders of magnitude. We employ density functional theory calculations to understand the origin of the measured negative gauge factor. Our results suggest PtSe2 as a very promising candidate for future NEMS applications, including integration into CMOS production lines.

Details

Original languageEnglish
Pages (from-to)3738-3745
Number of pages8
JournalNano letters
Volume18
Issue number6
Publication statusPublished - 13 Jun 2018
Peer-reviewedYes

External IDs

PubMed 29768010

Keywords

Keywords

  • gauge factors, platinum diselenide, Pressure sensors, strain sensors, two-dimensional