Germanium-based nearly hyperuniform nanoarchitectures by ion beam impact

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

Abstract

We address the fabrication of nano-architectures by impacting thin layers of amorphous Ge deposited on SiO2 with a Ga+ ion beam and investigate the structural and optical properties of the resulting patterns. By adjusting beam current and scanning parameters, different classes of nano-architectures can be formed, from elongated and periodic structures to disordered ones with a footprint of a few tens of nm. The latter disordered case features a significant suppression of large length scale fluctuations that are conventionally observed in ordered systems and exhibits a nearly hyperuniform character, as shown by the analysis of the spectral density at small wave vectors. It deviates from conventional random fields as accounted for by the analysis of Minkowski functionals. A proof of concept for potential applications is given by showing peculiar reflection properties of the resulting nano-structured films that exhibit colorization and enhanced light absorption with respect to the flat Ge layer counterpart (up to one order of magnitude at some wavelength). This fabrication method for disordered hyperuniform structures does not depend on the beam size. Being ion beam technology widely adopted in semiconductor foundries over 200 mm wafers, our work provides a viable pathway for obtaining disordered, nearly-hyperuniform materials by self-assembly with a footprint of tens of nanometers for electronic and photonic devices, energy storage and sensing.

Details

Original languageEnglish
Article number115953
JournalPhysica scripta
Volume98
Issue number11
Publication statusPublished - 15 Sept 2023
Peer-reviewedYes

External IDs

Scopus 85175955141
Mendeley 1582692b-4b19-3c87-bed1-3f8b3c9c66a2

Keywords

Keywords

  • Germanium on insulator, nanofabrication, minkowski functionals, correlated disorder, disordered hyperuniform

Library keywords