Frequency Doubler for 77 GHz Radar with 14 dB Conversion Gain and 7.3 % Efficiency in 22 nm FDSOI
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
A frequency doubler is designed to provide the local oscillator signal to a 77 GHz automotive radar system in 22 nm fully-depleted silicon on insulator (FDSOI) CMOS. Circuit design techniques such as Gm-boosted cascode, inductive peaking and load-pull/source-pull optimization is used to increase the conversion gain (CG) and output power of the circuit without requiring additional dc power. The back-gate control feature of the FDSOI process is employed as well for CG boosting. The frequency doubler delivers up to 5.5 dBm of output power in the 76–81 GHz band at a maximum power added efficiency (PAE) of 7.3 %. To the best knowledge of the authors, the peak conversion gain of 14 dB is among the highest reported for doublers in CMOS operating in the frequency range of the 77 GHz radar.
Details
Original language | English |
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Title of host publication | Asia-Pacific Microwave Conference (APMC) 2022 |
Publisher | IEEE |
Pages | 369-371 |
Number of pages | 3 |
ISBN (electronic) | 9784902339567 |
ISBN (print) | 978-1-6654-5108-6 |
Publication status | Published - 2 Dec 2022 |
Peer-reviewed | Yes |
Conference
Title | 2022 Asia-Pacific Microwave Conference (APMC) |
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Duration | 29 November - 2 December 2022 |
Location | Yokohama, Japan |
External IDs
Scopus | 85146663293 |
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ORCID | /0000-0002-6032-2576/work/142238521 |
ORCID | /0000-0003-1177-8750/work/142252584 |
Keywords
Research priority areas of TU Dresden
Keywords
- Frequency conversion, Frequency measurement, Gain, Microwave measurement, Radar, Semiconductor device measurement, Silicon-on-insulator