Flexible ingaZnO TFTs with fmax above 300 MHz
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
In this letter, the AC performance and influence of bending on flexible IGZO thin-film transistors, exhibiting a maximum oscillation frequency (maximum power gain frequency) {f}-{\textsf {max}} beyond 300 MHz, are presented. Self-Alignment was used to realize TFTs with channel length down to 0.5 \mu \text{m}. The layout of these TFTs was optimized for good AC performance. Besides the channel dimensions, this includes ground-signal-ground contact pads. The AC performance of these short channel devices was evaluated by measuring their two port scattering parameters. These measurements were used to extract the unity gain power frequency from the maximum stable gain and the unilateral gain. The two complimentary definitions result in {f}-{\textsf {max}} values of (304 ± 12) and (398 ± 53) MHz, respectively. Furthermore, the transistor performance is not significantly altered by mechanical strain. Here, {f}-{\textsf {max}} reduces by 3.6% when a TFT is bent to a tensile radius of 3.5 mm.
Details
Original language | English |
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Pages (from-to) | 1310-1313 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 39 |
Issue number | 9 |
Publication status | Published - Sept 2018 |
Peer-reviewed | Yes |
External IDs
ORCID | /0000-0001-6429-0105/work/142236595 |
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ORCID | /0000-0002-4152-1203/work/165453359 |
Keywords
Research priority areas of TU Dresden
ASJC Scopus subject areas
Keywords
- Flexible electronics, IGZO, maximum oscillation frequency, thin-film transistors