Dopants, i.e., electronically active impurities, are added to organic semiconductor materials to control the material's Fermi level and conductivity, to improve injection at the device contacts, or to fill trap states in the active device layers and interfaces. In contrast to bulk doping as achieved by blending or co-deposition of dopant and semiconductor, surface doping has a lower propensity to introduce additional traps or scattering centers or to even alter the layer morphology relative to the undoped active material layers. In this study, the electrical effects of a very simple, post-device-fabrication surface doping process involving various amine group–containing alkoxysilanes on the performance of organic field-effect transistors (OFETs) made from the well-known n-type materials PTCDI-C8 and N2200 are researched. It is demonstrated that OFETs doped in such a way generally show enhanced characteristics (up to 10 times mobility increase and a significant reduction in threshold voltage) without any adverse effects on the devices' on/off ratio. It is also shown that the efficiency of the doping process is linked to the number of amine groups.