Empirical Modelling of ReRAM Measured Characteristics Using Charge and Flux

Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review

Contributors

  • M. M. Al Chawa - , Chair of Fundamentals of Electronics (Author)
  • C. De Benito - , University of the Balearic Islands, Balearic Island Health Research Institute (Author)
  • H. Castan - , University of Valladolid (Author)
  • S. Duenas - , University of Valladolid (Author)
  • S. G. Stavrinides - , International Hellenic University (Author)
  • R. Tetzlaff - , Chair of Fundamentals of Electronics (Author)
  • R. Picos - , University of the Balearic Islands, Balearic Island Health Research Institute (Author)

Abstract

In this work, an empirical model based on a pure relation between charge and flux (aka an ideal memristor) has been proposed to fit the experimental data for ReRAM devices in flux charge domain. The model is able to capture the behavior with a very good accuracy, including also the behavior of the memconductance.

Details

Original languageEnglish
Title of host publication2022 11th International Conference on Modern Circuits and Systems Technologies, MOCAST 2022
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
ISBN (electronic)9781665467179
Publication statusPublished - 2022
Peer-reviewedYes

Publication series

SeriesInternational Conference on Modern Circuits and Systems Technologies (MOCAST)

Conference

Title11th International Conference on Modern Circuits and Systems Technologies
Abbreviated titleMOCAST 2022
Conference number11
Duration8 - 10 June 2022
Website
Degree of recognitionNational event
LocationHaus der Wissenschaft & Online
CityBremen
CountryGermany

External IDs

ORCID /0000-0001-7436-0103/work/172566274
ORCID /0000-0001-8886-4708/work/172572516

Keywords

ASJC Scopus subject areas

Keywords

  • charge, flux, memristor, modeling, ReRAM