Effect of ozone on the stability of solution-processed anthradithiophene- based organic field-effect transistors

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Iyad Nasrallah - , University of Cambridge (Author)
  • Kulbinder K. Banger - , University of Cambridge (Author)
  • Yana Vaynzof - , University of Cambridge, Heidelberg University  (Author)
  • Marcia M. Payne - , University of Kentucky (Author)
  • Patrick Too - , Plastic Logic Ltd. (Author)
  • Jan Jongman - , Plastic Logic Ltd. (Author)
  • John E. Anthony - , University of Kentucky (Author)
  • Henning Sirringhaus - , University of Cambridge (Author)

Abstract

We have investigated the degradation effects of ozone exposure on organic field-effect transistors based on 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene as the organic semiconducting channel layer, as well as on thin films of this widely used, high-mobility, small molecule semiconductor. Electrical I-V measurements showed a loss of transistor characteristic behavior. We present 1H Nuclear Magnetic Resonance (NMR) spectroscopy results as well as X-ray Photoemission Spectroscopy (XPS) and Fourier Transform Infrared (FTIR) spectroscopy measurements showing the oxidation of the parent molecule, from which we suggest various possible reaction paths.

Details

Original languageEnglish
Pages (from-to)3914-3919
Number of pages6
JournalChemistry of materials
Volume26
Issue number13
Publication statusPublished - 8 Jul 2014
Peer-reviewedYes
Externally publishedYes