In this paper analytical results are derived for nanoscale memristor CNN (NM-CNN) in which neurons operate in a regime called edge of chaos. The system describing the model consists of highly nonlinear differential equations. We propose new algorithm based on the generalized local activity scheme for the determination of the edge of chaos regime in nanoscale memristor CNN model under consideration. MATLAB implementation of algorithms based on a numerical integration of the NM-CNN state equations allowing a reliable and accurate determination of the edge of chaos parameter regime is proposed. Application of the obtained results for pattern formation is presented.