Dotiertes organisches Halbleitermaterial sowie Verfahren zu dessen Herstellung
Research output: Intellectual Property › Patent application/Patent
Contributors
- Novaled GmbH
Abstract
Doped organic semiconductor material obtained by doping with a compound consisting of organic molecular group(s) (A) with other compound partner(s) (B), the doping effect being achieved after cleavage of (A) from the compound by means of group(s) (A) or reaction products of (A) with another atom or molecule. Doped organic semiconductor material (I) with increased charge carrier density and effective charge carrier mobility, obtained by doping organic semiconductor material (II) with a compound (III) consisting of one or more organic molecular groups (A) with at least one other compound partner (B), the required doping effect being achieved after cleavage of at least one group (A) from (III) by means of group(s) (A) or reaction products of (A) with other atoms or molecules. An independent claim is also included for a method for the production of (I) by deposition of (III) on (II) under vacuum or inert gas, either by simultaneous evaporation with (II) or by successive evaporation followed by diffusion of dopants.
Translated title of the contribution | Doped organic semiconductor material for use e.g. in organic solar cells and LED's, obtained by doping with compounds which produce the doping effect after cleavage of certain groups |
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Details
Doped organic semiconductor material obtained by doping with a compound consisting of organic molecular group(s) (A) with other compound partner(s) (B), the doping effect being achieved after cleavage of (A) from the compound by means of group(s) (A) or reaction products of (A) with another atom or molecule. Doped organic semiconductor material (I) with increased charge carrier density and effective charge carrier mobility, obtained by doping organic semiconductor material (II) with a compound (III) consisting of one or more organic molecular groups (A) with at least one other compound partner (B), the required doping effect being achieved after cleavage of at least one group (A) from (III) by means of group(s) (A) or reaction products of (A) with other atoms or molecules. An independent claim is also included for a method for the production of (I) by deposition of (III) on (II) under vacuum or inert gas, either by simultaneous evaporation with (II) or by successive evaporation followed by diffusion of dopants.
Original language | German |
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IPC (International Patent Classification) | H01L 51/ 30 A N |
Patent number | DE10307125 |
Country/Territory | Germany |
Priority date | 18 Feb 2003 |
Priority number | DE20031007125 |
Publication status | Published - 8 Jan 2004 |