Dotiertes organisches Halbleitermaterial sowie Verfahren zu dessen Herstellung

Research output: Intellectual Property › Patent application/Patent

Contributors

  • Novaled GmbH

Abstract

Doped organic semiconductor material obtained by doping with a compound consisting of organic molecular group(s) (A) with other compound partner(s) (B), the doping effect being achieved after cleavage of (A) from the compound by means of group(s) (A) or reaction products of (A) with another atom or molecule. Doped organic semiconductor material (I) with increased charge carrier density and effective charge carrier mobility, obtained by doping organic semiconductor material (II) with a compound (III) consisting of one or more organic molecular groups (A) with at least one other compound partner (B), the required doping effect being achieved after cleavage of at least one group (A) from (III) by means of group(s) (A) or reaction products of (A) with other atoms or molecules. An independent claim is also included for a method for the production of (I) by deposition of (III) on (II) under vacuum or inert gas, either by simultaneous evaporation with (II) or by successive evaporation followed by diffusion of dopants.

Translated title of the contribution
Doped organic semiconductor material for use e.g. in organic solar cells and LED's, obtained by doping with compounds which produce the doping effect after cleavage of certain groups

Details

Doped organic semiconductor material obtained by doping with a compound consisting of organic molecular group(s) (A) with other compound partner(s) (B), the doping effect being achieved after cleavage of (A) from the compound by means of group(s) (A) or reaction products of (A) with another atom or molecule. Doped organic semiconductor material (I) with increased charge carrier density and effective charge carrier mobility, obtained by doping organic semiconductor material (II) with a compound (III) consisting of one or more organic molecular groups (A) with at least one other compound partner (B), the required doping effect being achieved after cleavage of at least one group (A) from (III) by means of group(s) (A) or reaction products of (A) with other atoms or molecules. An independent claim is also included for a method for the production of (I) by deposition of (III) on (II) under vacuum or inert gas, either by simultaneous evaporation with (II) or by successive evaporation followed by diffusion of dopants.

Original languageGerman
IPC (International Patent Classification)H01L 51/ 30 A N
Patent numberDE10307125
Country/TerritoryGermany
Priority date18 Feb 2003
Priority numberDE20031007125
Publication statusPublished - 8 Jan 2004
No renderer: customAssociatesEventsRenderPortal,dk.atira.pure.api.shared.model.researchoutput.Patent