Doping dependent plasmon dispersion in2H-transition metal dichalcogenides

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Eric Müller - , Leibniz Institute for Solid State and Materials Research Dresden (First author)
  • Bernd Büchner - , Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • Carsten Habenicht - , Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • Andreas König - , Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • Martin Knupfer - , Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • Helmuth Berger - , Swiss Federal Institute of Technology Lausanne (EPFL) (Author)
  • Simo Huotari - , University of Helsinki (Author)

Abstract

We report the behavior of the charge carrier plasmon of 2H-transition metal dichalcogenides (TMDs) as a function of intercalation with alkali metals. Intercalation and concurrent doping of the TMD layers have a substantial impact on plasmon energy and dispersion. While the plasmon energy shifts are related to the intercalation level as expected within a simple homogeneous electron gas picture, the plasmon dispersion changes in a peculiar manner independent of the intercalant and the TMD materials. Starting from a negative dispersion, the slope of the plasmon dispersion changes sign and grows monotonously upon doping. Quantitatively, the increase of this slope depends on the orbital character (4d or 5d) of the conduction bands, which indicates a decisive role of band structure effects on the plasmon behavior.

Details

Original languageEnglish
Pages (from-to)035110
Number of pages5
JournalPhysical Review B
Volume94
Publication statusPublished - 5 Jul 2016
Peer-reviewedYes
Externally publishedYes

External IDs

Scopus 84978438149

Keywords