DOPED ORGANIC SEMICONDUCTOR MATERIAL AND METHOD FOR PRODUCTION THEREOF
Research output: Intellectual Property › Patent application/Patent
Contributors
- Novaled GmbH
Abstract
The invention relates to a doped organic semiconductor material with increased charge carrier density and more effective charge carrier mobility, which may be obtained by doping an organic semiconductor material with a chemical compound comprising one or several organic molecular groups (A) and at least one further compound partner (B). The desired doping effect is achieved after cleavage of at least one organic molecular group (A) from the chemical compound by means of at least one organic molecular group (A) or by means of the product of a reaction of at least one molecular group (A) with another atom or molecule. A method for production thereof is disclosed.
Details
The invention relates to a doped organic semiconductor material with increased charge carrier density and more effective charge carrier mobility, which may be obtained by doping an organic semiconductor material with a chemical compound comprising one or several organic molecular groups (A) and at least one further compound partner (B). The desired doping effect is achieved after cleavage of at least one organic molecular group (A) from the chemical compound by means of at least one organic molecular group (A) or by means of the product of a reaction of at least one molecular group (A) with another atom or molecule. A method for production thereof is disclosed.
Original language | English |
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IPC (International Patent Classification) | H01L 51/ 30 A N |
Patent number | CA2463377 |
Country/Territory | Germany |
Priority date | 20 Feb 2003 |
Priority number | WO2003DE00558 |
Publication status | Published - 28 Aug 2003 |