Pyroelectric detectors are used for gas analysis and flame detection because of their fast response and excellent performance. Most pyroelectric devices are based on monocrystalline lithium tantalate or pyroelectric lead zirconate titanate thin films deposited on a silicon (Si) substrate. In comparison, recently discovered pyroelectric-doped hafnium oxide (HfO2) offers the possibility of manufacturing completely complementary metal-oxide-semiconductor (CMOS)-compatible devices on large Si wafers. This is a promising approach to simplifying mass production of the sensor element and realizing new sensor structures with a high performance. Si substrates were structured with trenches and filled with thin-doped HfO2 layers by atomic layer deposition to multiply the pyroelectric current responsivity. An effective pyroelectric coefficient of up to 1300 μC / m2 / K was measured. Micromechanical structuring of the 6-in Si wafers was used to improve the thermal conversion of the sensor element. The applied plasmonic absorbers increase the infrared light absorption to >80 % for the spectral range of 3 to 5 μm, which was determined using Fourier transform infrared reflection measurements. In the first step, the performance of the sensor element was evaluated with an analog transimpedance amplifier with a feedback resistance of 5 GΩ. A specific detectivity D * > 1 · 107 cm√Hz / W was measured for the frequency range of 1 to 10 Hz. In addition, an application-specific integrated circuit was designed for the electrical signal conditioning to build a fully CMOS-compatible pyroelectric detector. It offers a simple to manufacture, flexible configuration, and digital communication interface with a signal-to-noise performance close to analog detectors. We present the measurement results of different sensor elements and detector types.