Design and Characterization of a 54–76 GHz SiGe Power Amplifier

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This paper presents the design and characterization of a millimeter-wave (mmWave) power amplifier (PA) with a saturated output power of 11 dBm in a 130 nm SiGe technology. A pseudo-differential single-stage cascode topology is used to obtain a gain of 14 dB at 66 GHz and a small-signal 1 dB-bandwidth from 54 to 76 GHz. The proposed PA exceeds comparable conventional PAs in terms of bandwidth while being more efficient than wideband distributed amplifiers. Within the unlicensed bands between 57 GHz and 66 GHz, the 1 dB-compression point is larger than 9 dBm and the power-added-efficiency (PAE) at compression is larger than 9 %. To achieve optimal performance of the mmWave structures, the effects of patterned ground shields (PGSs) on inductors and transmission lines in the used technology are investigated by measurements.


Original languageEnglish
Title of host publicationLASCAS 2024 - 15th IEEE Latin American Symposium on Circuits and Systems, Proceedings
Number of pages4
ISBN (electronic)9798350381221
ISBN (print)979-8-3503-8123-8
Publication statusPublished - 1 Mar 2024


Title2024 IEEE 15th Latin America Symposium on Circuits and Systems
Abbreviated titleLASCAS 2024
Conference number15
Duration27 February - 1 March 2024
CityPunta del Este

External IDs

Scopus 85192260642
ORCID /0000-0002-0088-8412/work/160477302
ORCID /0000-0001-9692-2808/work/160478632
Mendeley e06d5172-166e-38ec-bc1d-b82a1695ac07



  • Distributed amplifiers, Power transmission lines, Power amplifiers, Transmission line measurements, Topology, Millimeter wave communication, Inductors, cascode, BiCMOS integrated circuits, power amplifiers, mm-wave