Delay time compensation for parallel connected IGBTs: Implementation and extension for n IGBTs
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
The increasing demand for large power ratings and the physically limited maximum current density of semiconductor devices in power electronics make the connection of semiconductors in parallel or series an interesting alternative for high power applications. The selection of the devices, the manual parametrization of gate units and the substantial device de-rating are important disadvantages of state of the art converters with parallel connected IGBTs.
Details
| Original language | English |
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| Title of host publication | 2014 16th European Conference on Power Electronics and Applications |
| Publisher | IEEE |
| Pages | 1-10 |
| Number of pages | 10 |
| ISBN (print) | 978-1-4799-3015-9 |
| Publication status | Published - 28 Aug 2014 |
| Peer-reviewed | Yes |
Conference
| Title | 2014 16th European Conference on Power Electronics and Applications |
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| Duration | 26 - 28 August 2014 |
| Location | Lappeenranta, Finland |
External IDs
| Scopus | 84923863375 |
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Keywords
Keywords
- Insulated gate bipolar transistors, Delays, Voltage measurement, Current measurement, Registers, Switches