Current measurement of GaN power devices using a frequency compensated SMD shunt
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
Semiconductor materials as Silicon Carbide (SiC) and Gallium Nitride (GaN) enabling development of very fast switching and low loss power devices. The fast switching transients demanding high bandwidth measurement capability, while not influencing the switching behaviour. In this paper a current measurement method, using a low inductive SMD shunt with a frequency compensation network, is introduced.
Details
| Original language | English |
|---|---|
| Title of host publication | PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
| Publisher | VDE Verlag, Berlin [u. a.] |
| Pages | 1-8 |
| Number of pages | 8 |
| ISBN (print) | 978-3-8007-4938-6 |
| Publication status | Published - 9 May 2019 |
| Peer-reviewed | Yes |
Conference
| Title | 2019 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
|---|---|
| Abbreviated title | PCIM Europe 2019 |
| Duration | 7 - 9 May 2019 |
| Location | Messe Nürnberg |
| City | Nürnberg |
| Country | Germany |