Current measurement of GaN power devices using a frequency compensated SMD shunt

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Abstract

Semiconductor materials as Silicon Carbide (SiC) and Gallium Nitride (GaN) enabling development of very fast switching and low loss power devices. The fast switching transients demanding high bandwidth measurement capability, while not influencing the switching behaviour. In this paper a current measurement method, using a low inductive SMD shunt with a frequency compensation network, is introduced.

Details

Original languageEnglish
Title of host publicationPCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
PublisherVDE Verlag, Berlin [u. a.]
Pages1-8
Number of pages8
ISBN (print)978-3-8007-4938-6
Publication statusPublished - 9 May 2019
Peer-reviewedYes

Conference

TitlePCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Duration7 - 9 May 2019
LocationNuremberg, Germany