Common cathode VCSEL driver in 90 nm CMOS enabling 25 Gbit/s optical connection using 14 Gbit/s 850 nm VCSEL

G. Belfiore; L. Szilagyi; R. Henker; F. Ellinger

doi:10.1049/el.2014.4217

Common cathode VCSEL driver in 90 nm CMOS enabling 25 Gbit/s optical connection using 14 Gbit/s 850 nm VCSEL

Research output: Contribution to journal › Research article › Contributed › peer-review

Contributors

G. Belfiore - , Chair of Circuit Design and Network Theory (Author)
L. Szilagyi - , Chair of Circuit Design and Network Theory (Author)
R. Henker - , Chair of Circuit Design and Network Theory (Author)
F. Ellinger - , Chair of Circuit Design and Network Theory (Author)

Abstract

The design and electro-optical measurements of a 25 Gbit/s common cathode vertical cavity surface-emitting laser (VCSEL) driver in 90 nm bulk CMOS technology is presented. The driver is bonded to a 14 Gbit/s commercial VCSEL providing both DC and modulation current to the laser. The power consumption including the VCSEL is 60 mW. Since the DC bias of the VCSEL exceeds the breakdown voltage of thin oxide transistors, a novel output stage configuration using isolated wells is proposed. The active area is only 127 × 50 μm.

Details

Original language	English
Pages (from-to)	349-351
Number of pages	3
Journal	Electronics letters : the latest research in electronic engineering and technology
Volume	51
Issue number	4
Publication status	Published - Feb 2015
Peer-reviewed	Yes

External IDs

Scopus	84923058212
ORCID	/0000-0002-1851-6828/work/142256665

Research Portal of the TU Dresden

Common cathode VCSEL driver in 90 nm CMOS enabling 25 Gbit/s optical connection using 14 Gbit/s 850 nm VCSEL

Contributors

Abstract

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