Diffusion processes and phase formations as well as the crystallographic structure of microelectronic contact zones decisively influence the electrical and mechanical properties of electronic components. Using various physical methods in the same analysis area, such as lattice source interferences and divergent beam X-ray interferences, optical microscopy and SEM, electron probe microanalysis and the ion beam slope cutting method, profound statements about the micro structure can be made. A Kossel camera and an additional divergent beam X-ray device were built and installed in a Scanning Electron Microscope (SEM) CamScan CS 44. X-ray interferences in the microrange of selected areas were taken using both systems, providing information on the crystallographic orientation and the real structure of the specimens. The interference techniques were tested using single-crystal and ion-bombarded polycrystalline copper. In addition, applying the mentioned methods, the diffusion generated intermetallic compounds Cu₃Sn, Cu₆Sn₅ and Cu₄₁Sn₁₁ were investigated using ion-bombarded Cu-Sn/Pb model samples.