Future high-capacity wireless communications will extensively use the broad bands still available millimeter-wave frequencies. Channels with bandwidth broader than those in use today will guarantee enhanced data-rate and reduced latency performance. The recent progress of integrated-circuit semiconductor technologies finally allowed the design of reliable electronics operating at millimeter-wave frequencies. On top, advanced Fully Depleted Silicon On Insulator (FD-SOI) Complementary Metal Oxide Semiconductor (CMOS) and Silicon Germanium (SiGe) Bipolar CMOS (BiCMOS) processes enabled to co-integrate large digital blocks with frontends operating at tens or hundreds of GHz. The current under-deployment fifth-generation mobile-communication standard (5G) takes advantage of these advancements, massively exploiting the frequency bands from 24 GHz to 100 GHz. Furthermore, besides enlarging the channel bandwidth, improvements of the signal-to-noise power ratio (SNR) at the receiver input, combined with Multiple-Input Multiple-Output (MIMO) techniques provide an additional boost to the communication data-rate. Both approaches require arrays of antennas, plus electronic beam-steering which becomes essential in the case of moving transmitting-receiving pairs. Finally, social, economic, historical, and technological trends indicate that future wireless standards will require data-rates, latencies, and density of served users per square kilometer well beyond those offered by the 5G. Envisioned to be deployed towards the end of this decade, the six mobile communication standard (6G) will win future challenges thanks to the very ultra-broad bands available from 100 GHz until the tens of THz. Basic research is hence needed to address the open challenges necessary to reach the goals of future wireless communication systems, such as bandwidth and frequency operation factor-10 increase or power consumption reduction against the actual state of the art. This Habilitation thesis proposes circuit theory and concepts up to feasibility study of circuit implementation and experimental characterization in the laboratory of transceiver electronics for future high-capacity communications useful for the knowledge gain necessary for the conception of future communication systems. In detail, basic scientific research to understand the operation of millimeter-wave communication circuits implemented in 22 nm FD-SOI CMOS and 130 nm SiGe BiCMOS technologies has been performed.