Characterization of Short Circuit Behavior of Parallel Connected GaN HEMT Power Semiconductors
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
Galliumnitride (GaN) power semiconductor devices are available in a limited current range at nominal device voltages of typically 650V. A parallelization of GaN devices enables the realization of converters with increased power. Since GaN power semiconductors feature a high switching speed, a well-designed circuit layout is required to enable a symmetric current distribution of parallel GaN devices. The very fast short circuit protection is a further demanding challenge. This paper presents a characterization of the short circuit type 1 and type 2 behavior of parallel connected GaN HEMTs for different driving conditions. The influence of important design parameters is considered.
Details
Original language | English |
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Title of host publication | PCIM Europe 2023 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
Pages | 2621-2630 |
Number of pages | 10 |
Publication status | Published - 11 May 2023 |
Peer-reviewed | Yes |