IGBT press pack devices have become a serious competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. The main focus of the paper is the characterization of a 125 mm, 4.5 kV, 2.4kA press pack SPT-plus-IGBT and the corresponding freewheeling diode at hard switching. Furthermore, the losses, the behavior and the semiconductor stress (peak power) are investigated. Finally the device characteristics are compared to that of state-of-the-art 91mm, 4.5 kV, 3.8 kA IGCTs.