Characterization of 4.5 kV/2.4 kA press pack IGBT including comparison with IGCT
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
IGBT press pack devices have become a serious competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. The main focus of the paper is the characterization of a 125 mm, 4.5 kV, 2.4kA press pack SPT-plus-IGBT and the corresponding freewheeling diode at hard switching. Furthermore, the losses, the behavior and the semiconductor stress (peak power) are investigated. Finally the device characteristics are compared to that of state-of-the-art 91mm, 4.5 kV, 3.8 kA IGCTs.
Details
Original language | German |
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Title of host publication | 2013 IEEE Energy Conversion Congress and Exposition |
Publisher | IEEE |
Pages | 260-267 |
Number of pages | 8 |
ISBN (print) | 978-1-4799-0336-8 |
Publication status | Published - 19 Sept 2013 |
Peer-reviewed | Yes |
Conference
Title | 2013 IEEE Energy Conversion Congress and Exposition |
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Abbreviated title | ECCE 2013 |
Duration | 15 - 19 September 2013 |
City | Denver |
Country | United States of America |
External IDs
Scopus | 84891067351 |
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Keywords
Keywords
- Insulated gate bipolar transistors, Presses, Semiconductor diodes, Logic gates, Transient analysis, Clamps, Temperature measurement