Characterization of 4.5 kV/2.4 kA press pack IGBT including comparison with IGCT

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Contributors

Abstract

IGBT press pack devices have become a serious competition for IGCTs in high power industrial applications. This paper presents an overview of state-of-the-art medium voltage power semiconductors with active turn-off capability. The main focus of the paper is the characterization of a 125 mm, 4.5 kV, 2.4kA press pack SPT-plus-IGBT and the corresponding freewheeling diode at hard switching. Furthermore, the losses, the behavior and the semiconductor stress (peak power) are investigated. Finally the device characteristics are compared to that of state-of-the-art 91mm, 4.5 kV, 3.8 kA IGCTs.

Details

Original languageGerman
Title of host publication2013 IEEE Energy Conversion Congress and Exposition
PublisherIEEE
Pages260-267
Number of pages8
ISBN (print)978-1-4799-0336-8
Publication statusPublished - 19 Sept 2013
Peer-reviewedYes

Conference

Title2013 IEEE Energy Conversion Congress and Exposition
Abbreviated titleECCE 2013
Duration15 - 19 September 2013
CityDenver
CountryUnited States of America

External IDs

Scopus 84891067351

Keywords

Keywords

  • Insulated gate bipolar transistors, Presses, Semiconductor diodes, Logic gates, Transient analysis, Clamps, Temperature measurement