Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
The thermal coupling between emitter fingers in a state-of-the-art InP DHBT process technology is characterized using a novel test-structure. It is discussed how thermal coupling impacts multi-finger transistors. A simple model describing the coupling effect is incorporated into a scalable HICUM/L2 model. It is shown how the model can be utilized to design thermally optimized InP HBT structures so as to accurately reproduce characteristics of a multi-finger transistor.
Details
| Original language | English |
|---|---|
| Title of host publication | 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| Pages | 208-211 |
| Number of pages | 4 |
| ISBN (electronic) | 978-1-6654-9132-7 |
| ISBN (print) | 978-1-6654-9133-4 |
| Publication status | Published - 19 Oct 2022 |
| Peer-reviewed | Yes |
Conference
| Title | 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium |
|---|---|
| Abbreviated title | BCICTS 2022 |
| Duration | 16 - 19 October 2022 |
| Location | Sheraton Phoenix Downtown |
| City | Phoenix |
| Country | United States of America |
External IDs
| Scopus | 85150028058 |
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Keywords
ASJC Scopus subject areas
Keywords
- Couplings, DH-HEMTs, Data models, Heterojunction bipolar transistors, Power amplifiers, Semiconductor device modeling, Thermal resistance, HICUM, device modeling, compact modeling, thermal resistance, thermal coupling, InP HBT, self-heating, HBT