Carrier dynamics in (ZnMg)O alloy materials

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Alexej Chernikov - , University of Marburg (Author)
  • Swantje Horst - , University of Marburg (Author)
  • Martin Koch - , University of Marburg (Author)
  • Kerstin Volz - , University of Marburg (Author)
  • Sangam Chatterjee - , University of Marburg (Author)
  • Stephan W. Koch - , University of Marburg (Author)
  • Thomas A. Wassner - , Technical University of Munich (Author)
  • Bernhard Laumer - , Technical University of Munich (Author)
  • Martin Eickhoff - , Justus Liebig University Giessen (Author)

Abstract

Carrier recombination dynamics in Zn1-xMgxO alloys were studied by time-resolved photoluminescence as function of Mg concentration and lattice temperature for different emission and excitation energies. Disorder and carrier localization effects are found to play a significant role, becoming increasingly important for lower temperatures and higher Mg concentrations. Emission energy dependent dynamics were analyzed by the application of a theoretical model, yielding a characteristic localization energy of 60 ± 15 meV for the sample with the highest Mg concentration of x = 0.21.

Details

Original languageEnglish
Pages (from-to)1149-1152
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number4
Publication statusPublished - Apr 2011
Peer-reviewedYes
Externally publishedYes

Keywords

ASJC Scopus subject areas

Keywords

  • Carrier dynamics, Disorder, Semiconductors, Time-resolved photoluminescence, ZnMgO