Carrier dynamics in (ZnMg)O alloy materials
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
Carrier recombination dynamics in Zn1-xMgxO alloys were studied by time-resolved photoluminescence as function of Mg concentration and lattice temperature for different emission and excitation energies. Disorder and carrier localization effects are found to play a significant role, becoming increasingly important for lower temperatures and higher Mg concentrations. Emission energy dependent dynamics were analyzed by the application of a theoretical model, yielding a characteristic localization energy of 60 ± 15 meV for the sample with the highest Mg concentration of x = 0.21.
Details
Original language | English |
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Pages (from-to) | 1149-1152 |
Number of pages | 4 |
Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
Volume | 8 |
Issue number | 4 |
Publication status | Published - Apr 2011 |
Peer-reviewed | Yes |
Externally published | Yes |
Keywords
ASJC Scopus subject areas
Keywords
- Carrier dynamics, Disorder, Semiconductors, Time-resolved photoluminescence, ZnMgO