Application of gate-to-channel capacitance measurements for extraction and investigation of the effective mobility in MoS2 field effect transistors with hysteresis of electrical characteristics

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Tamara Rudenko - , National Academy of Sciences of Ukraine (Author)
  • Yu V Gomeniuk - , National Academy of Sciences of Ukraine (Author)
  • O Slobodian - , National Academy of Sciences of Ukraine (Author)
  • P Lytvyn - , National Academy of Sciences of Ukraine (Author)
  • Eros Reato - , RWTH Aachen University (Author)
  • A Esteki - , RWTH Aachen University (Author)
  • Max Christian Lemme - , RWTH Aachen University, AMO GmbH (Author)
  • A Nazarov - , National Academy of Sciences of Ukraine (Author)
  • Transregio 404: Next Generation Electronics With Active Devices in Three Dimensions

Details

Original languageEnglish
Article number105909
JournalPhysica scripta
Volume101
Issue number10
Publication statusPublished - 13 Mar 2026
Peer-reviewedYes
Externally publishedYes

Keywords

Research priority areas of TU Dresden