Anomalous Nernst effect in perpendicularly magnetized τ-MnAl thin films
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Contributors
Abstract
τ-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here, we report on the anomalous Nernst effect of sputter deposited τ-MnAl thin films. We demonstrate a robust anomalous Nernst effect at temperatures of 200 and 300 K with a hysteresis similar to the anomalous Hall effect and the magnetization of the material. The anomalous Nernst coefficient of (0.6 ± 0.24) µV/K at 300 K is comparable to other perpendicular magnetic anisotropy thin films. Therefore, τ-MnAl is a promising candidate for spin-caloritronic research.
Details
Original language | English |
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Article number | 125227 |
Journal | AIP advances |
Volume | 13 |
Issue number | 12 |
Publication status | Published - 1 Dec 2023 |
Peer-reviewed | Yes |