Anisotropic magnetoresistance in altermagnetic MnTe

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • Ruben Dario Gonzalez Betancourt - , Czech Academy of Sciences, Leibniz Institute for Solid State and Materials Research Dresden, Charles University Prague (Author)
  • Jan Zubáč - , Czech Academy of Sciences, Charles University Prague (Author)
  • Kevin Geishendorf - , Czech Academy of Sciences (Author)
  • Philipp Ritzinger - , Czech Academy of Sciences, Charles University Prague (Author)
  • Barbora Růžičková - , Czech Academy of Sciences (Author)
  • Tommy Kotte - , Helmholtz-Zentrum Dresden-Rossendorf (HZDR) (Author)
  • Jakub Železný - , Czech Academy of Sciences (Author)
  • Kamil Olejník - , Czech Academy of Sciences (Author)
  • Gunther Springholz - , Johannes Kepler University Linz (Author)
  • Bernd Büchner - , Chair of Experimental Solid State Physics, Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • Andy Thomas - , Chair of Solid State Physics, Leibniz Institute for Solid State and Materials Research Dresden (Author)
  • Karel Výborný - , Czech Academy of Sciences (Author)
  • Tomas Jungwirth - , Czech Academy of Sciences, University of Nottingham (Author)
  • Helena Reichlová - , Institute of Solid State and Materials Physics, Czech Academy of Sciences (Author)
  • Dominik Kriegner - , Chair of Solid State Physics, Czech Academy of Sciences (Author)

Abstract

Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. Altermagnetism is manifested as a three-fold component in the transverse magnetoresistance which arises due to the anomalous Hall effect.

Details

Original languageEnglish
Article number45
Journalnpj Spintronics
Volume2
Issue number1
Publication statusPublished - 13 Aug 2024
Peer-reviewedYes