Analytical Study of the Fading Memory Phenomenon in a TaOx Memristor Model
Research output: Contribution to book/conference proceedings/anthology/report › Conference contribution › Contributed › peer-review
Contributors
Abstract
This paper presents a theoretical study of the fading memory phenomenon in a TaOx-based memristor, manufactured and modeled at Hewlett-Packard Labs. Specifically, we derive a set of equations that can be used to characterize its steady-state response to a high-frequency zero-mean periodic square-wave voltage stimulus. Our results reveal a hidden property of the Dynamic Route Map (DRM) system-theoretic analysis tool, i.e. its capability to predict accurately the mean value of the state variable oscillation in first-order non-volatile memristors, at steady-state, as a function of the input amplitude alone. This DRM property may be useful in real-world memristor-based applications, where voltage pulses are most often employed to modulate the states of practical memristor devices.
Details
Original language | English |
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Title of host publication | 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
Place of Publication | Glasgow |
Publisher | IEEE Xplore |
Pages | 1-4 |
ISBN (electronic) | 9781665488235, 978-1-6654-8824-2 |
Publication status | Published - 2022 |
Peer-reviewed | Yes |
Publication series
Series | IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
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Conference
Title | 29th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2022 |
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Duration | 24 - 26 October 2022 |
City | Glasgow |
Country | United Kingdom |
External IDs
dblp | conf/icecsys/MessarisADNT22 |
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ORCID | /0000-0002-1236-1300/work/142239544 |
ORCID | /0000-0001-7436-0103/work/142240363 |