This paper investigates the low-power potential of SiGe HBTs in V-band low noise amplifier(LNA) designs. An LNA consisting of a single-stage cascode circuit has been designed in the IHP 130nm SiGe technology. Different biasing conditions of the transistors have been investigated to find the optimum for low-power, low-noise and high-gain operation. The current density has been chosen to achieve a proper balance between the gain and noise performance. To minimize the DC power, the supply voltage has been chosen to be the lowest required to ensure sufficient gain and noise figure. The device dimensions of the LNA have been determined to enable a low-loss broadband input matching by solely using a single series inductor. The designed LNA achieves a minimum noise figure of 2.4dB under a nominal supply voltage of 0.6V. The noise figure on average is 2.8dB from 54GHz to 67GHz. At the nominal supply voltage, the LNA consumes only 1.4mW DC power and provides a gain of around 14dB and a bandwidth of 7.3GHz.