In this work, we present a parameter extraction method for TiO₂ memristive devices that applies on a resistive switching rate model which embodies only four parameters for each voltage biasing polarity. The simple form of the model functions allows the derivation of a predictive analytical resistive state response expression under constant bias voltage. By employing corresponding experimental testing on the devices, we fit such constant bias responses exhibited by physical memristor samples on this analytical expression. Next, we apply a simple algorithm that extracts the suitable model parameters that capture the switching rate behavior of the characterized device in its voltage range of operation.