A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: A Temperature-Modulated Operation
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Details
Original language | English |
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Pages (from-to) | 2793-2799 |
Number of pages | 7 |
Journal | IEEE transactions on electron devices : ED |
Issue number | 7 |
Publication status | Published - 2020 |
Peer-reviewed | Yes |
External IDs
Scopus | 85087339134 |
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