A New Temperature-Based Model for the Reset Transition on ReRAM Memristive Devices
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
In this paper we consider Resistive switching RAM (ReRAM) devices as memristors and we introduce a memristor model in flux-charge domain rather than the usually prefered voltage-current one. We employ the proposed model during the high resistance state of the device. We relate the parameters of the memristor model with a state variable, the temperature, by using a quasi-static thermal model. The emerging results using this simple model show a very good agreement with the experimental ones, correspondingly.
Details
| Original language | English |
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| Title of host publication | 2021 10th International Conference on Modern Circuits and Systems Technologies, MOCAST 2021 |
| Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| ISBN (electronic) | 9781665418478 |
| Publication status | Published - 5 Jul 2021 |
| Peer-reviewed | Yes |
Publication series
| Series | International Conference on Modern Circuits and Systems Technologies (MOCAST) |
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Conference
| Title | International Conference on Modern Circuits and Systems Technologies 2021 |
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| Abbreviated title | MOCAST 2021 |
| Conference number | 10 |
| Duration | 5 - 7 July 2021 |
| Degree of recognition | International event |
| City | Thessaloniki |
| Country | Greece |
External IDs
| ORCID | /0000-0001-7436-0103/work/172566307 |
|---|---|
| ORCID | /0000-0001-8886-4708/work/172572522 |
Keywords
ASJC Scopus subject areas
Keywords
- memristor, model, nonlinear dynamics, ReRAM, resistive switching (RS)