A low power, inductor-free, two-stage UWB LNA was designed and fabricated in 130nm SiGe BiCMOS technology. The proposed cascadation of a common-base and a common-collector stage with negative feedback enables high gain, wideband active matching and adequate linearity, consuming only 2.9mW. The measured gain S21 is higher than 10.8dB while the noise figure NF stays below 5.3dB over the entire frequency range. Including AC coupling capacitors, the total chip area is less than 0.021mm2. Considering the low power and chip area requirements, the presented LNA provides superior performance to enable the next generation of sustainable RF circuits for IoT applications.