A low power 30 GHz Class-D VCO with common mode resonance in 22 nm FD-SOI

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Abstract

In this paper, we investigate a class-D CMOS VCO (Voltage Controlled Oscillator) at 30 GHz. To prove the concept, the circuit is implemented in 22 nm Fully Depleted Silicon On Insulator (FD-SOI) technology. It features a compact inductor with close coupling distance and a second harmonic common-mode resonance to boost the phase noise performance. The VCO needs a DC power of 2.08 mW from a 0.5 V supply and shows a measured free running phase noise of -116.5 dBc/Hz at 10 MHz offset. Thanks to the compact inductor the proposed VCO only occupies an area of 0.0156 mm2 and achieves one of the best FoMA, a figure of merit that also takes the VCO core area into account, among the state-of-the-art VCOs around 30 GHz.

Details

Original languageEnglish
Title of host publication2023 Asia-Pacific Microwave Conference, APMC 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages270-272
Number of pages3
ISBN (electronic)978-1-6654-9418-2
Publication statusPublished - 2023
Peer-reviewedYes

Conference

Title31st Asia-Pacific Microwave Conference, APMC 2023
Duration5 - 8 December 2023
CityTaipei
CountryTaiwan, Province of China

External IDs

ORCID /0000-0001-6778-7846/work/159607341

Keywords

ASJC Scopus subject areas

Keywords

  • Class-D, CMOS, low-voltage, mm-wave, voltage-controlled oscillator (VCO)