A Compact and Continuous Reformulation of the Strachan TaOxMemristor Model with Improved Numerical Stability
Research output: Contribution to journal › Research article › Contributed › peer-review
Contributors
Abstract
We present a compact, continuous, and numerically stable version of a tantalum oxide (TaOx) memristor model which can be employed for robust and reliable simulations of large scale memristor based circuits. The original model contains a piecewise differentiable function in the memductance expression and discontinuous step functions in the state equation. Additionally, the original model does not set a proper upper bound for the state variable and may admit blowing up solutions due to an exponential power term, preventing the use of it for numerically reliable simulations. Considering these drawbacks, we modify the original model so as to i) simplify the memductance function while removing its piecewise differentiable nonlinearity, ii) include a proper window function for the ON state dynamics, which is missing in the original model, iii) modify and bound the exponential power term to prevent an uncontrollable blow-up of the solutions, and iv) apply a process called unification, allowing us to remove the step functions inherent in the model, which is a novelty in state-limited memristor models. We validate the accuracy of the proposed model via DC and transient simulations, dynamic route map analysis and a Spice implementation of an anti-series configuration, showing the applicability of the model.
Details
Original language | English |
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Pages (from-to) | 1266-1277 |
Number of pages | 12 |
Journal | IEEE Transactions on Circuits and Systems I: Regular Papers |
Volume | 69 |
Issue number | 3 |
Publication status | Published - 8 Dec 2021 |
Peer-reviewed | Yes |
External IDs
ORCID | /0000-0002-1236-1300/work/142239550 |
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ORCID | /0000-0001-7436-0103/work/142240383 |
Keywords
ASJC Scopus subject areas
Keywords
- Discontinuity, Memristor, Modeling, Spice, TaO