A Compact and Continuous Reformulation of the Strachan TaOxMemristor Model with Improved Numerical Stability

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

Abstract

We present a compact, continuous, and numerically stable version of a tantalum oxide (TaOx) memristor model which can be employed for robust and reliable simulations of large scale memristor based circuits. The original model contains a piecewise differentiable function in the memductance expression and discontinuous step functions in the state equation. Additionally, the original model does not set a proper upper bound for the state variable and may admit blowing up solutions due to an exponential power term, preventing the use of it for numerically reliable simulations. Considering these drawbacks, we modify the original model so as to i) simplify the memductance function while removing its piecewise differentiable nonlinearity, ii) include a proper window function for the ON state dynamics, which is missing in the original model, iii) modify and bound the exponential power term to prevent an uncontrollable blow-up of the solutions, and iv) apply a process called unification, allowing us to remove the step functions inherent in the model, which is a novelty in state-limited memristor models. We validate the accuracy of the proposed model via DC and transient simulations, dynamic route map analysis and a Spice implementation of an anti-series configuration, showing the applicability of the model.

Details

Original languageEnglish
Pages (from-to)1266-1277
Number of pages12
JournalIEEE Transactions on Circuits and Systems I: Regular Papers
Volume69
Issue number3
Publication statusPublished - 8 Dec 2021
Peer-reviewedYes

External IDs

ORCID /0000-0002-1236-1300/work/142239550
ORCID /0000-0001-7436-0103/work/142240383

Keywords

ASJC Scopus subject areas

Keywords

  • Discontinuity, Memristor, Modeling, Spice, TaO