A 30 Gb/s High-Swing, Open-Collector Modulator Driver in 250 nm SiGe BiCMOS
Research output: Contribution to book/Conference proceedings/Anthology/Report › Conference contribution › Contributed › peer-review
Contributors
Abstract
This paper presents a modulator driver realized as a breakdown voltage doubler which can provide a high output swing of 7.6 Vpp,diff for load impedances as low as 30 Ω, thus overcoming the limitation imposed by the collector-emitter breakdown voltage. The open-collector design gives an important degree of freedom regarding the modulator load to be driven, while significantly reducing the circuit's power consumption. The driver is capable of running at 30 Gb/s while dissipating 1 W of DC power. Thanks to the inductorless design, the active area occupied by the circuit is only 0.28 mm × 0.23 mm. The driver was realized in a 250 nm SiGe BiCMOS technology.
Details
Original language | English |
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Title of host publication | IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS) |
Publisher | IEEE |
Pages | 5-8 |
Number of pages | 4 |
ISBN (electronic) | 978-1-5386-7392-8, 978-1-5386-7391-1 |
ISBN (print) | 978-1-5386-7393-5 |
Publication status | Published - 8 Aug 2018 |
Peer-reviewed | Yes |
Publication series
Series | Midwest Symposium on Circuits and Systems (MWSCAS) |
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Volume | 2018-August |
ISSN | 1548-3746 |
Conference
Title | 2018 IEEE 61st International Midwest Symposium on Circuits and Systems |
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Abbreviated title | MWSCAS 2018 |
Conference number | 61 |
Duration | 5 - 8 August 2018 |
City | Windsor |
Country | Canada |
External IDs
Ieee | 10.1109/MWSCAS.2018.8624057 |
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Scopus | 85062212346 |
ORCID | /0000-0002-1851-6828/work/142256636 |
Keywords
ASJC Scopus subject areas
Keywords
- Power demand, Transmitters, Circuits and systems, Phase shifters, Loading, Electrooptic modulators, Modulation