A 28 GHz and 38 GHz Dual-Band Up-Conversion Mixer for 5G Applications in 22 nm FD-SOI CMOS

Research output: Contribution to book/Conference proceedings/Anthology/ReportConference contributionContributedpeer-review

Abstract

This paper investigates a dual-band direct up-conversion mixer operating at 5G millimeter-wave (mmW) bands. To prove the concept, the mixer is implemented in a 22nm FDSOI technology. A Gilbert cell was applied for the mixer core to achieve a high local oscillator signal (LO) suppression. An active balun was integrated on-chip to manage and optimize the LO phase- and magnitude-mismatch. Dual-band and broadband matching networks enable dual-band operation. The mixer has a total power consumption of 38mW including the LO active balun, mixer core and RF output buffer. The measurements show a conversion gain of −2.6 dB and −1 dB and a 1-dB output compression point (oP1dB) of −2.5 dBm and −0.6 dBm at 28 GHz and 38 GHz bands, respectively. The core area of the design is 0.24 mm 2 . The mixer compares well against other designs operating at 5GmmW bands by showing one of the highest oP1dB, a comparable conversion gain and power consumption. To the best knowledge of the authors, this is the first 5G dual-band up-conversion mixer from technology node 22nm and below.

Details

Original languageEnglish
Title of host publicationPRIME 2023 - 18th International Conference on Ph.D Research in Microelectronics and Electronics, Proceedings
Pages141-144
Number of pages4
ISBN (electronic)9798350303209
Publication statusPublished - 18 Jun 2023
Peer-reviewedYes

Conference

Title18th International Conference on PhD Research in Microelectronics and Electronics
Abbreviated titlePRIME 2023
Conference number18
Duration18 - 21 June 2023
Website
Degree of recognitionInternational event
LocationHotel Primus
CityValencia
CountrySpain

External IDs

Scopus 85164985162
ORCID /0000-0001-6778-7846/work/142240187
ORCID /0000-0003-1177-8750/work/142252598

Keywords

DFG Classification of Subject Areas according to Review Boards

Keywords

  • 22nm FD-SOI, 5G, CMOS, dual-band, millimeter-wave integrated circuits, mixer, up-conversion