A 21-dBm 3.7 W/mm2 28.7% PAE 64-GHz power amplifier in 22-nm FD-SOI
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Contributors
Abstract
This letter presents the design of a 64-GHz power amplifier (PA) in a 22-nm FD-SOI CMOS technology. Benefiting from optimized pseudodifferential cascode gain cells as well as the alternate-layer stacked transformers for impedance matching and power combining, the two-stage PA delivers 21 dBm of output power from a 2-V supply voltage at a PAE of 28.7 %. Thanks to the low-loss 2:1 interstage matching transformer, the PA delivers 31 dB of power gain from a compact active area of 270 μ m × 124 μ m = 0.0335 mm2. To the best of our knowledge, the proposed PA has the highest output power to area ratio (Psat/Area) in comparison to the state of the art above 60 GHz.
Details
Original language | English |
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Article number | 9194717 |
Pages (from-to) | 386-389 |
Number of pages | 4 |
Journal | IEEE solid-state circuits letters : ISCLCN |
Volume | 3 |
Publication status | Published - 2020 |
Peer-reviewed | Yes |
External IDs
Scopus | 85090994156 |
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Keywords
Keywords
- 60 GHz, CMOS, microwave integrated circuits, nonlinear circuits, power amplifiers (PAs), power-added efficiency (PAE)