A 100-mW 4x10 Gb/s transceiver in 80-nm CMOS for high-density opticalinterconnects

Research output: Contribution to journalResearch articleContributedpeer-review

Contributors

  • C. Kromer - (Author)
  • G. Sialm - (Author)
  • C. Berger - (Author)
  • T. Morf - (Author)
  • M.L. Schmatz - (Author)
  • F. Ellinger - , Chair of Circuit Design and Network Theory (Author)
  • D. Erni - (Author)
  • G.-L. Bona - (Author)
  • H. Jäckel - (Author)

Abstract

This paper describes a quad optical transceiver for low-power high-densityshort-distance optical data communication. Each channel transmits10 Gb/s over a multimode (MM) fiber and features a link margin of5.2 dB at a bit error rate (BER) of 10/sup -12/. The transmit andreceive amplifying circuits are implemented in an 80-nm digital CMOSprocess. Each driver consumes 2 mW from a 0.8-V supply, and eachvertical cavity surface-emitting laser (VCSEL) requires 7 mA froma 2.4-V supply. The receiver excluding the output buffer consumes6 mW from a 1.1-V supply per channel and achieves a transimpedancegain of 80.1 dB/spl Omega/. The isolation to the neighboring channelsis >30dB including the bond wires and optical components. A detailedlink budget analysis takes the relevant system impairments as lossesand power penalties into account, derives the specifications forthe electrical circuits, and accurately predicts the link performance.This work presents the highest serial data rate for CMOS transceiverarrays and the lowest power consumption per data rate reported todate.

Details

Original languageEnglish
Pages (from-to)2667-2679
Number of pages13
JournalIEEE journal of solid-state circuits
Volume40
Issue number12
Publication statusPublished - 1 Dec 2005
Peer-reviewedYes

External IDs

Scopus 29044435079

Keywords

Keywords

  • CMOS digital integrated circuits, data communication equipment, integratedoptoelectronics, optical communication equipment, optical fibre communication, optical interconnections, surface emitting lasers, transceivers 0.8V, 10 Gbit/s, 100 mW, 2 mW, 2.4 V, 6 mW, 7 mA, 80 nm, CMOS transceiverarrays, digital CMOS process, high-density optical interconnects, low power consumption, multimode fiber, optical data communication, quad optical transceiver, receive amplifying circuits, serial datarate, transmit amplifying circuits, vertical cavity surface-emittinglaser