3.6 GHz Asymmetric Doherty PA MMIC in 250 nm GaN for 5G Applications

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Abstract

This work presents a design approach of a fully integrated Doherty power amplifier (PA) based on a 250nm Gallium-Nitride (GaN) MMIC process. This ultra-compact circuit is designed for massive MIMO base stations in the foreseen European 5G band from 3.4 to 3.8 GHz. Due to the significantly higher instantaneous bandwidth of up to 100MHz and a peak-to-average ratio (PAPR) of 8.5 dB in this telecommunication service, methods for increasing bandwidth while maintaining energy efficiency in the output back-off (OBO) were investigated. A power added efficiency (PAE) of 55% at 38.5dBm and 46% at 30dBm output power was measured. Furthermore, the phase sensitivity of the main and peak path is analysed, which is essential for ensuring the Doherty characteristics.

Details

Original languageEnglish
Title of host publicationGerman Microwave Conference (GeMiC) 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (electronic)978-3-9820-3971-8
ISBN (print)978-1-7281-4206-7
Publication statusPublished - Mar 2020
Peer-reviewedYes

Publication series

SeriesGerman Microwave Conference (GeMIC)

Conference

Title2020 German Microwave Conference, GeMIC 2020
Duration9 - 11 March 2020
CityCottbus
CountryGermany

External IDs

ORCID /0000-0002-6032-2576/work/142238520
ORCID /0000-0001-6778-7846/work/142240153

Keywords

Research priority areas of TU Dresden

Sustainable Development Goals

Keywords

  • 5G, Doherty power amplifier, gallium nitride (GaN), monolithic microwave integrated circuit (MMIC)