In this paper, a passive down mixer is proposed, which is well suitedfor short-channel field-effect transistor technologies. The authors believe that this is the first drain-pumped transconductance mixerthat requires no dc supply power. The monolithic microwave integratedcircuit (MMIC) is fabricated using digital 90-nm silicon-on-insulatorCMOS technology. All impedance matching, bias, and filter elementsare implemented on the chip, which has a compact size of 0.5 mm/spltimes/0.47 mm. The circuit covers a radio frequency range from 30to 40 GHz. At a RF frequency of 35 GHz, an intermediate frequencyof 2.5 GHz and a local-oscillator (LO) power of 7.5 dBm, a conversionloss of 4.6 dB, a single-sideband (SSB) noise figure (NF) of 7.9dB, an 1-dB input compression point of -6 dBm, and a third-orderintercept point at the input of 2 dBm were measured. At lower LOpower of 0 dBm, a conversion loss of 6.3 dBm and an SSB NF of 9.7dB were measured, making the mixer an excellent candidate for lowpower-consuming wireless local-area networks. All results includethe pad parasitics. To the knowledge of the authors, this is thefirst CMOS mixer operating at millimeter-wave frequencies. The achievedconversion loss is even lower than for passive MMIC mixers usingleading edge III/V technologies, showing the excellent suitabilityof digital CMOS technology for analog circuits at millimeter-wavefrequencies.