230 GHz Signal Generator for High-Bandwidth Data Links in 130 nm SiGe BiCMOS

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This study presents an analysis of an energy efficient signal generator designed to enable short-range wireless data links for innovative base station architectures. The focus of this research is to achieve efficient frequency generation at 230 GHz using 130 nm SiGe BiCMOS technology. The circuit consists of a 57.5 GHz fundamental oscillator followed by subsequent stages that quadruple the output frequency. The implemented design achieves an operating range from 208.7 GHz to 253.2 GHz with a maximum output power of 1.81 dBm. The DC-to-RF efficiency of the signal generator is measured to be 2.16 %, which is competitive with other signal generators in SiGe BiCMOS technology operating in this frequency range.


Original languageEnglish
Title of host publication2024 IEEE Radio and Wireless Week, RWW 2024 - 2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2024
Number of pages4
ISBN (electronic)9798350343304
ISBN (print)979-8-3503-4331-1
Publication statusPublished - 24 Jan 2024


Title2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Abbreviated titleSiRF 2024
Conference number24
Duration21 - 24 January 2024
LocationGrand Hyatt San Antonio River Walk
CitySan Antonio
CountryUnited States of America

External IDs

ORCID /0000-0001-6429-0105/work/155290557
ORCID /0000-0003-2197-6080/work/155292462
Scopus 85186761910
Mendeley 78c39412-721b-33b6-8982-e5509f536e1e



  • Computer architecture, Signal generators, BiCMOS integrated circuits, Frequency measurement, Oscillators, Power generation, Silicon germanium, BiCMOS integrated circuits, Oscillators, SiGe, Sub-THz, frequency synthesis, millimeter wave, quadrupler, voltage-controlled oscillator